采用溶液化学法实现了在Zn(NO3)2/C6H12N4混合溶液中ZnO纳米线在AZO薄膜修饰过衬底上生长.AZO薄膜由射频磁控溅射法制备,通过溅射时间和基底温度的变化改变薄膜形态,重点研究了不同薄膜形态对ZnO纳米线形貌和结构的影响,最终在溅射2h、基底温度250℃晶种上得到垂直于衬底、高度平行取向的ZnO纳米线阵列.在此基础上研究了不同形貌ZnO纳米线阵列的紫外光电导性能差异.结果表明,垂直生长的纳米线较倒伏纳米线紫外响应迅速,分析认为是紫外光照下曝光面积不同造成的.
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