研究了具有立方结构的碳化硅(β-SiC)粉料在单晶生长过程中的物相变化及对生长晶体均匀性、缺陷等的影响。实验发现,在晶体生长过程中原料的晶型转变和Si、C挥发不一致造成晶体沿生长方向存在一个Si/C摩尔比的最大值。晶体中的针孔等缺陷的形成与原料中的杂质和气相组分偏离Si/C=1摩尔比有关,并通过电子探针得到证实。
SiC single crystal was grown by physical vapor transportation (PVT) technique using β-SiC raw materials. The phase transformation of raw materials during
the crystal growth was investigated by XRD. It was found that the phase transition from β-SiC to α-SiC was completed after growth of 30min. The molar
ratio of Si/C in the grown crystal was more than 1 and dependent on the growth time. The maximum value of Si/C was obtained at the intermediate growth process.
The formation of pinhole in the grown crystal was related to the deviation from stoichiometry of Si/C=1 in the vapor phase and the impurity of raw materials. It was confirmed by EDX analysis.
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