采用真空热蒸发技术在单晶硅基底上沉积PVDF薄膜.通过分析阻蒸温度对薄膜沉积速率和真空室气压变化的影响研究了PVDF镀膜过程.同时利用傅立叶变换衰减全反射红外光谱(ATR-FTIR)、X射线衍射(XRD)和差热分析(DSC)对薄膜的晶型结构进行了表征分析,结果发现,真空热蒸发技术可制备具有高度取向性的α晶相PVDF薄膜,且薄膜中不舍C=C键.相比于PVDF树脂粉末,所得薄膜的结晶度明显增大而分子量显著减小,实现了PVDF薄膜的低维化制备.
Ferroelectric poly(vinylidene fuoride) (PVDF) films are deposited on monocrystalline silicon substrate by vacuum thermal evaporation technology. The effect of resistance evaporation temperature on deposition rate and vacuum is studied to investigate deposition process of PVDF. The films are characterized by attenuated total reflection-Fourier transform infrared(ATR-FTIR), X-ray diffraction(XRD) and differential scanning calorimetry(DSC). The results show that the low dimensional oriented α-hase thin films,free of other C=C band are obtained by vacuum thermal evaporation technology. The degrees of crystallinity are increased and molecular weights of oriented thin films are drastically decreased in comparison to PVDF resin powder, and got a technology of preparation of low dimensional PVDF thin films.
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