金刚石具有一系列优异的物理化学性能,特别是独特的电学和热学性能,使其在半导体领域具有极佳的应用前景.通过详细评述金刚石的各种性能,以及与其他半导体材料的性能比较,提出了金刚石在半导体器件应用领域的优势.详细介绍了金刚石半导体掺杂以及金刚石半导体器件的种类和应用,并在此基础上展望了金刚石在半导体领域的应用.
Diamond is a perfect material with tremendous potential in the semiconductor field due to its extreme physical and chemical properties, especially its unique electronic and thermal properties. The advantages of diamond are shown by reviewing the properties of diamond and comparing it with other semiconductors. The doping of diamond, the classification of diamond semiconductor device and their applications are introduced in detail. And finally,the application potentials of diamond semiconductor are prospected based on the discussion.
参考文献
[1] | Isberg J;Hammersberg J;Johansson E et al.High carrier mobility in single-crystal plasma-deposited diamond[J].Science,2002,297(06):1670. |
[2] | J. Xie;J. Tamaki .In-process evaluation of grit protrusion feature for fine diamond grinding wheel by means of electro-contact discharge dressing[J].Journal of Materials Processing Technology,2006(1/3):83-90. |
[3] | S.G. Moseley;K.-P. Bohn;M. Goedickemeier .Core drilling in reinforced concrete using polycrystalline diamond (PCD) cutters: Wear and fracture mechanisms[J].International Journal of Refractory Metals & Hard Materials,2009(2):394-402. |
[4] | F. H. Sun;Z. M. Zhang;M. Chen;H. S. Shen .Improvement of adhesive strength and surface roughness of diamond films on Co-cemented tungsten carbide tools[J].Diamond and Related Materials,2003(3-7):711-718. |
[5] | X.M. Meng;W.Z. Tang;L.F. Hei .Application of CVD nanocrystalline diamond films to cemented carbide drills[J].International Journal of Refractory Metals & Hard Materials,2008(5):485-490. |
[6] | Manfred Thumm .MPACVD-diamond windows for high-power and long-pulse millimeter wave transmission[J].Diamond and Related Materials,2001(9-10):1692-1699. |
[7] | Wallny RS;Cindro V;Dolenc I;Frais-Kolbl H;Mikuz M;Niegl M;Pernegger H;Trischuk W;Weilhammer P;Zavrtanik M .Status of diamond detectors and their high energy physics application[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(3):824-828. |
[8] | Young TF .Fabrication and thermal analysis of a copper/diamond/copper thermal spreading device[J].Surface & Coatings Technology,2007(4/7):1208-1213. |
[9] | Claude A. Klein .Diamond windows and domes: flexural strength and thermal shock[J].Diamond and Related Materials,2002(2):218-227. |
[10] | Xuantong Ying;Jinlong Luo;Peinan Wang;Mingqi Cui;Yidong Zhao;Gang Li;Peiping Zhu .Ultra-thin freestanding diamond window for soft X-ray optics[J].Diamond and Related Materials,2003(3-7):719-722. |
[11] | Vescan A.;Daumiller I. .Very high temperature operation of diamond Schottky diode[J].IEEE Electron Device Letters,1997(11):556-558. |
[12] | Geis M W .Device quality diamond substrates[J].Diamond and Related Materials,1992,1(5-6):684. |
[13] | Borst TH.;Weis O. .BORON-DOPED HOMOEPITAXIAL DIAMOND LAYERS - FABRICATION, CHARACTERIZATION, AND ELECTRONIC APPLICATIONS[J].Physica Status Solidi, A. Applied Research,1996(1):423-444. |
[14] | Pan L S et al.Electrical properties of high quality diamond films[J].Diamond and Related Materials,1993,2(5-7):820. |
[15] | K. Somogyi .Classical appromiations for ionised impurity scattering applied to diamond monocrystals[J].Diamond and Related Materials,2002(3-6):686-691. |
[16] | Fox B A;Hartsell M L et al.Diamond devices and electrical properties[J].Diamond and Related Materials,1995,4(5-6):622. |
[17] | Chris J. H. Wort;Richard S. Balmer .Diamond as an electronic material[J].Materials Today,2008(1/2):22-28. |
[18] | Y. Oshiki;J.H. Kaneko;F. Fujita .Saturation drift velocity measurement for CVD diamond by combination of a charge distribution measurement and a TOF method using a UV pulsed laser[J].Diamond and Related Materials,2006(10):1508-1512. |
[19] | A. Aleksov;M. Kubovic;N. Kaeb;U. Spitzberg;A. Bergmaier;G. Dollinger;Th. Bauer;M. Schreck;B. Stritzker;E. Kohn .Diamond field effect transistors-concepts and challenges[J].Diamond and Related Materials,2003(3-7):391-398. |
[20] | Rezek B;Nebel C E .Electronic properties of plasma hydrogenated diamond surface:A microscopic study[J].Diamond and Related Materials,2005,15(09):1374. |
[21] | Taylor P D;Chamund D J et al.Applications of high voltage power semiconductor devices:Potential for diamond electronics[J].Industrial Diamond Review,2006,2(01):19. |
[22] | HudginsJL .A review of modern power semiconductor devices[J].Microelectronics Journal,1993,24(1-2):41. |
[23] | Butler JE.;Geis MW.;Krohn KE.;Lawless J.;Deneault S.;Lyszczarz TM. Flechtner D.;Wright R. .Exceptionally high voltage Schottky diamond diodes and low boron doping[J].Semiconductor Science and Technology,2003(3 Suppl.):S67-S71. |
[24] | Twitchen D J;Whitehead A J;Coe S E et al.High-voltage single-crystal diamond diodes[J].IEEE Transactions on Electron Devices,2004,51(05):826. |
[25] | Gluche P.;Wolter S.D. .Highly rectifying Au-contacts on diamond-on-silicon substrate[J].IEEE Electron Device Letters,1996(6):270-272. |
[26] | Wade M;Muret P;Omnes F et al.Technology and electrical properties of ohmic contacts and Schottky diodes on ho-moepitaxial layers grown on (100) diamond surfaces[J].Diamond and Related Materials,2006,15(4-8):614. |
[27] | Zimmermann T;Kubovic M;Denisenko A et al.Ultra-nano-crystalline/single crystal diamond heterostructure diode[J].Diamond and Related Materials,2005,14(3-7):416. |
[28] | Miskys C R;Garrido J A et al.AIN/diamond heterojunction diodes[J].Applied Physics Letters,2003,82(02):290. |
[29] | Cheng-Xin Wang;Guo-Wei Yang;Tie-Chen Zhang;Hong-Wu Liu;Yong-Hao Han;Ji-Feng Luo;Chun-Xiao Gao;Guang-Tian Zou .High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal[J].Applied physics letters,2003(23):4854-4856. |
[30] | Erhard Kohn;Andrej Denisenko .Concepts for diamond electronics[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(10):4333-4339. |
[31] | Huang W;Chow T P;Yang J et al.High-voltage diamond vertical Schottky rectifiers[J].IEEE Power Semicond Devices and ICs,2005,5(23):319. |
[32] | Gurbuz Y;Esame O;Tekin I et al.Diamond semiconductor technology for RF device application[J].Solid-State Electronics,2005,49(07):1055. |
[33] | Hiroaki Ishizaka;Hitoshi Umezawa;Hirotada Taniuchi;Takuya Arima;Naoki Fujihara;Minoru Tachiki;Hiroshi Kawarada .DC and RF characteristics of 0.7-#mu#m-gate-length diamond metal-insulator-semiconductor field effect transistor[J].Diamond and Related Materials,2002(3-6):378-381. |
[34] | A. Hokazono;K. Tsugawa;H. Umezana;K. Kitatani;H. Kawarada .Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond[J].Solid-State Electronics,1999(8):1465-1471. |
[35] | Kawakami N;Yokota Y;Hayashi K et al.Device operation of p-i-p type diamond metal-insulator-semiconductor field effect transistors with sub-micrometer channel[J].Diamond and Related Materials,2005,14(3-7):509. |
[36] | Kohn E.;Schmid P.;Denisenko A.;Aleksov A.;Ebert W.;Adamschik M. .Prospects of diamond devices [Review][J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2001(16):R77-R85. |
[37] | Hajji H E;Denisenko A;Kaiser A et al.Diamond MISFET based on boron delta-doped channel[J].Diamond and Related Materials,2008,17(7-10):1259. |
[38] | Denisenko A;Kohn E .Diamond power devices.Concepts and limits[J].Diamond and Related Materials,2005,14(3-7):491. |
[39] | M.E. Mora-Ramos .Valence band states in diamond p-delta-doped quantum wells[J].Microelectronics journal,2004(1):83-85. |
[40] | Shiomi H.;Nishibayashi Y. .Pulse-doped diamond p-channel metal semiconductor field-effect transistor[J].IEEE Electron Device Letters,1995(1):36-38. |
[41] | Vescan A.;Gluche P. .High-temperature, high-voltage operation of pulse-doped diamond MESFET[J].IEEE Electron Device Letters,1997(5):222-224. |
[42] | Hitoshi Umezawa;Hirotada Taniuchi;Takuya Arima .Potential applications of surface channel diamond field-effect transistors[J].Diamond and Related Materials,2001(9-10):1743-1748. |
[43] | Matsudaira H;Takuya A;Umezawa H et al.Deep sub-micron gate diamond MISFETs[J].Diamond and Related Materials,2003,12(10-11):1814. |
[44] | Kasu M;Kobayashi N .High hole mobility at room temperature in hydrogen-terminated (001) diamond[J].Applied Physics Letters,2002,80(21):3961. |
[45] | Kasu M;Ueda K;Ye H et al.High RF output power for H-terminated diamond FETs[J].Diamond and Related Materials,2006,15(4-8):783. |
[46] | Doneddu D;Guy O J et al.X-ray photoelectron spectroscopy studied on the formation of chromium contacts to singlecrystal CVD diamond[J].Surface Science,2007,602(06):1135. |
[47] | Calvani P et al.DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond[J].Diamond and Related Materials,2009,18(5-8):786. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%