C-H-N体系生长金刚石薄膜

无机材料学报, 1999, 14(6): 840-846.

C-H-N体系生长金刚石薄膜

万永中 , 张志明 , 沈荷生 , 何贤昶 , 张卫 , 王季陶

1.1. 上海交通大学微电子研究所

上海 200030

上海 200433

1.1. Microelectronic Technique Center

Shanghai Jiao Tong University

Shanghai 200030

China

2. 2. Dept. of Electronic Engineering

Fudan University

Shanghai 200433

China

关键词：金刚石 , diamond , phase diagram , nitrogen

Phase Diagrams in C-H-N System for Low Pressure CVD Diamond Growth

WAN Yong-Zhong , ZHANG Zhi-Ming , SHEN He-Sheng , HE Xian-Chang , ZHANG Wei , WANG Ji-Tao

Keywords： chemical vapor deposition , 含氮气源 , 相图 , 化学气相淀积

通过热力学分析从理论计算上给出了C－H－N体系中低压生长金刚石的三元相图．该相图中存在金刚石生长区．不同温度和压强下金刚石生长区几乎都位于CH₄－N连线以下，并且随衬底温度的改变而有显著的变化．随着氮含量的增加，金刚石生长区向碳含量减少的方向移动．使用该相图对优化添加含氮气源生长金刚石的实验条件提供了理论依据．

The ternary C-H-N phase diagrams for low pressure diamond growth were theoretically calculated through thermodynamic analysis. Thcre are diamond growth regions in these phase diagrams. Almost all the diamond growth regions in triangle phase diagrams located below the CH₄-N line in the low carbon concentration region, and its shape and position change greatly with substrate temperature. The diamond growth regions allow us to optimize the experimental conditions of low pressure CVD diamond growth with nitrogen addition.

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