采用微波等离子体增强的化学气相淀积法,在Si(111)衬底上生长了(002)择优取向良好的AIN纳米薄膜研究淀积参数对膜的形貌、物相结构和生长速率的影响,发现在一定条件下,该起积过程属于典型的输运控制过程采用表面吸附生长模型讨论了膜的生长机制
By microwave plasma enhanced chemical vapor deposition we prepared highly (002) oriented AIN nanometer thin film on Si(111) substrate. The effect on sudece morphology. film structure and deposition rate at various deposition conditions had been researched
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