Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC

稀土学报(英文版), 2006, 24(z1): 19-22.

^1, , ^2, , ^3, , ^4, , ^5,

1.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

2.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

3.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

4.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

5.Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

基金项目: 高等学校博士学科点专项科研项目(20040700001) 国家自然科学基金(60376011;60576044)

Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC

Keywords： SiCGe

Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.

参考文献

[1]	陈治明,蒲红斌,Fred R.BEYETTE Jr.A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer[J].中国物理快报(英文版),2003(03):430-432.
[2]	Z.M. Chen;H.B. Pu;L.M. Wo;G. Lu;L.B. Li;C.X. Tan .Hetero-epitaxial growth of SiCGe on SiC[J].Microelectronic engineering,2006(1):170-175.
[3]	吴洁君,韩修训,李杰民,黎大兵,魏宏远,康亭亭,王晓晖,刘祥林,王占国.缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响[J].人工晶体学报,2005(03):466-470.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC

参考文献