研究了SiC上AlN晶须的气相生长技术.通过对生长温度和压力的调控,获得了六方柱状、台梯状和条带状三种形貌的AlN晶须.柱状晶须长度可达35 mm,直径lμm左右.通过扫描电镜和XRD分析,探讨了AlN晶须形态、结晶取向和生长条件之间的关系.低温、低压、较高饱和度条件下,AlN晶须沿[0001]方向生长,发育为六方细柱.随着生长温度提高,AlN晶须的优先生长面转向{1-102}面,形貌变为笔直的台梯状.继续增加压力,{10-10}面成为优先生长面,晶须呈现卷曲的条带状.
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