介绍了一种应用电子浴辅助阴极电弧源法合成AlN薄膜的新方法， 研究了N2流量、 阴极偏压、工作气压等工艺参数对合成AlN薄膜质量的影响规律。结果表明， 随N2流量的增加，AlN薄膜的质量得以提高，当N2流量达到30mLmin-1时，可合成较纯净的AlN薄膜； 阴极偏压主要影响合成薄膜的结晶状况；此外，基体材料本身及其表面状况也对合成薄膜的质量有一定影响。
A new synthesizing aluminum nitride thin film method, which uses activated active ion plating with cathode arc source assisted by electrons bath, was introduced. The effect law of process parameters (including nitrogen flow rate, substrate bias potential, gas pressure etc.) on the quality of synthesized aluminum nitride was investigated. The results show that the quality of AlN thin films are improved with the increase of N2 flow rate. When N2 flow rate reaches to 30 mL*min-1， comparatively pure AlN thin film is synthesized. The cathode bias potential mainly affects the crystallinity of the films. In addition， substrate material and its surface state also have some effects on the films.
参考文献
| [1] | 师昌绪.材料大辞典[M].北京:化学工业出版社,1994:1066,1065. |
| [2] | 田民波.薄膜科学与技术手册[M].北京:机械工业出版社,1991:730-735. |
| [3] | 张伟;张仕国.AlN薄膜的研究进展[J].材料科学与工程,1996(04):31-33. |
| [4] | Edgar J H;Yu Z J;Ahmed A U et al.Low temperature metal-organic chemical vapor deposition of aluminium nitride with nitrogen trifluoride as nitrogen source[J].Thin Solid Films,1990,189(12):L11-L14. |
| [5] | Lu H L;Semmer W F;Borden M T et al.The microstructure and properties of a buried AlN layer produced by nitrogen implantation into pure aluminium[J].Thin Solid Films,1996,289(01):17-21. |
| [6] | 罗蒙泰;黄良浦;杨一民.离子增强沉积AlN(AlN)x(Al2O3)1-x薄膜的性能研究[J].先进材料进展,1993(02):90-92. |
| [7] | 潘俊德,田林海,莘海维,贺琦,李力.电子浴辅助阴极电弧源活性反应离子镀合成AlN薄膜[J].热加工工艺,2000(04):22-24. |
| [8] | 潘俊德;范本慧;徐 重 et al.加弧辉光离子渗金属技术及设备[P].CN:9010381,1991. |
| [9] | Kishi M;Suzuki M;Ogawa K .Low-temperature synthesis of aluminium nitride film by HCD-type ion plating[J].Japanese Journal of Applied Physics,1992,31(04):1153-1159. |
| [10] | Fen J Y;Xie J Q;Mo Q W .Reactive partially ionized Beam Deposition of AlN thin films[J].Materials Letters,1997,33:133-136. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%