从金属-半导体-绝缘体-金属（MSIM）层的非线性效应和慢极化效应分析了不能用正弦讯号的频域方法来研究其动态性质的原因．对于这种结构，用时域介电谱方法能更可靠地分出MOS结构的接触层和绝缘层中空间电荷运动的许多重要信息．
Because of slow polarization and non-linear effects, the dynamic properties of Metal-Semiconductor-Insulator-Metal (MSIM) layer were obtained incorrectly by frequency domian spectra with sinusoidal current. For this structure, time domain dielectric spectra can distinguish the effects reliably between contact and insulating layer of MOS structure. More important information of space charges motion can also be obtained by this method.
参考文献
| [1] | 郭维廉. 硅·二氧化硅界面物理. 北京: 国防工业出版社, 1989 2 李景德, 曹万强, 李向前等. 物理学报, 1996, 45 (7): 1225--1231 3 梁鹿亭. 半导体器件表面钝化技术. 北京: 科学出版社, 1979 4 Dunlap W C. An Introduction to Semiconductors, John. Wiley and Sons, New York, 1957 5 雷德铭, 符德胜, 李景德(LEI De-Ming et al). 无机材料学报(Journal of Inorganic Materials), 1993, 8 (2): 201--206 |
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