首次运用电子束光刻技术和真空沉积技术在硅片表面制备了宽度在20纳米Ni80Fe20薄膜铁磁金属纳米点连接,通过对铁磁金属薄膜纳米点连接样品在不同温度下的磁电阻和I~V的研究,得出宽度在20纳米的铁磁金属薄膜纳米点连接中所观察到的磁电阻现象是各向异性磁电阻,其导电行为主要是金属导体导电行为,受量子化电导作用较小;通过对宽度在20纳米至250纳米之间的不同宽度的纳米点连接的磁电阻的测量,发现纳米点连接的磁电阻比例以及电阻值均与纳米点连接的宽度没有必然关系;实验结果表明在20纳米宽的铁磁金属薄膜点连接样品中可能不存在铁磁金属纳米点接触样品中所观察到高比例的弹道磁电阻现象,其磁电阻行为仍然是在铁磁金属体材料中常见的各向异性磁电阻现象,受尺寸效应的影响较小.
An anisotropic magnetoresistance and metal conductive behavior is found in the 20nm width thin film ferromagnetic nanoconstriction by studying the magnetoresistance curve and I~V characteristic of them at different temperature;In order to clarify the relationship between the ratio of magnetoresistance and the width of the ferromagnetic nanoconstriction,the ferromagnetic nanoconstrictions with 20nm ~250nm were fabricated also,the results show that the ratio of the magnetoresistance have nothing with the width of the nanoconstriction;All these results show that the high ratio ballistic magnetoresistance phenomenon may not be existed in the thin film ferromagnetic nanoconstriction and the magnetoresistance of them is the universal anisotropic magnetoresistance.
参考文献
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