退火温度对ZnO/Si异质结光电转换特性的影响

材料导报, 2010, 24(16): 94-103.

退火温度对ZnO/Si异质结光电转换特性的影响

张伟英 ^1, , 刘振中 ^2, , 赵建果 ^3, , 傅竹西 ^4,

1.洛阳师范学院物理与电子信息学院,洛阳,471022;中国科学技术大学物理系,合肥,230026

2.洛阳师范学院物理与电子信息学院,洛阳,471022

3.洛阳师范学院物理与电子信息学院,洛阳,471022

4.中国科学技术大学物理系,合肥,230026

基金项目: 洛阳师范学院校基金(2008-PYJJ-009) 国家自然科学基金(50532070) 中国科学院三期创新项(KJCX3.5YW.W01)

关键词： ZnO/Si异质结 , 退火温度 , 光伏效应

Influence of Thermal Annealing Temperature on the Photovoltaic Effect of ZnO/Si Heterojunction

采用直流反应溅射法在P-Si(100)衬底上制备了ZnO薄膜,XRD测量表明ZnO为沿c轴高度取向的多晶薄膜,1-V特性曲线表明,ZnO/Si异质结具有明显的整流特性.研究了退火温度对异质结光电转换特性的影响,结果显示,合适的退火温度能显著增大异质结的开路电压和短路电流,进而增大异质结的光电转换效率,经400℃退火后异质结获得最佳的转换效率.当退火温度达到或超过500℃时,异质结的反向电流迅速增加,光生电压和光生电流大幅度减小.通过对ZnO薄膜结构和电学性质的测量和分析,推测异质结的光电转换特性改变主要受ZnO薄膜的电学性质影响.

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材料期刊网

退火温度对ZnO/Si异质结光电转换特性的影响

Influence of Thermal Annealing Temperature on the Photovoltaic Effect of ZnO/Si Heterojunction

参考文献