基于一次烧结工艺,通过改变烧结温度,制备5种组分相同、(Sr,Bi,Si,Ta)掺杂的TiO2陶瓷试样.借助于伏安特性、介电频率特性、损耗频率特性及非线性系数的测定,研究烧结温度对TiO2基压敏陶瓷压敏和介电性质的影响.结果表明,在1200～1400℃范围内,随着烧结温度的降低,陶瓷的压敏电压降低、介电常数增大,同时非线性系数有所减小.兼顾陶瓷压敏和介电特性,烧结温度选择1350℃为宜.
Based on the single sintering process, five disk samples of (Sr, Bi, Si, Ta)-doped TiO2-based varistor ceramics were fabricated, by sintering separately at the temperatures of 1200 to 1400 ℃ for 2.5h. The influence of sintering temperature on the nonlinear electrical behavior and dielectric properties of these samples were investigated by measuring the characteristics of J-V, dielectric constant, dielectric loss and nonlinear coefficient. It was found that, between 1200 and 1400℃, both breakdown electrical field and nonlinear coefficient decreased and dielectric constant increased gradually with decreasing sintering temperature. It is suggested that the sintering temperature should be about 1350℃ considering both nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics.
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