采用室温溅射加后续退火工艺制备了ZnO∶ Al透明导电薄膜.研究了热处理工艺对薄膜微观结构和光电性能的影响.研究表明:退火有助于减小Al~(3+)对Zn~(2+)的取代造成的晶格畸变,消除应力,促进晶粒长大,有效提高电子浓度和迁移率,降低电阻率;当溅射功率为80 W、退火温度为320 ℃时,薄膜的电阻率可低至8.6×10~(-4) Ω·cm;退火气氛对薄膜的导电性能有较大影响,真空退火可使吸附氧脱附,大大降低薄膜的方块电阻.而退火温度和退火气氛均对ZnO∶ Al薄膜的透光率没有明显影响,薄膜的透光率在86%以上.
ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure, electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress, increasing the carrier concentration and the mobility, decreasing electrical resistivities to a value of 8.6×10~(-4) Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films, which is above 86%.
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