通过高分辨X射线衍射(HRXRD)技术,对金属有机化合物气相外延(MOCVD)生长的GaN外延膜及SiC衬底的相对取向,晶格常数和应力情况,位错密度等进行了分析.分析表明,GaN和SiC具有一致的a轴取向,GaN外延层弛豫度超过90％,GaN外延层的晶格常数与体块材料相近,在GaN中存在压应力,SiC衬底和GaN外延层中的位错密度分别为107和108量级.
参考文献
| [1] | C.J. Youn;T.S. Jeong;M.S. Han;J.W. Yang;K.Y. Lim;H.W. Yu .Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs[J].Journal of Crystal Growth,2003(3/4):331-338. |
| [2] | 李亮,李忠辉,罗伟科,董逊,彭大青,张东国.高质量GaN薄膜的MOCVD同质外延生长[J].人工晶体学报,2013(05):915-917. |
| [3] | 张雷,邵永亮,吴拥中,张浩东,郝霄鹏,蒋民华.HVPE生长室气流分布模拟及GaCl载气流量对GaN单晶生长的影响[J].人工晶体学报,2011(04):853-857. |
| [4] | Domagala JZ.;Zytkiewicz ZR.;Beaumont B.;Kozlowski J.;Czernetzki R. Prystawko P.;Leszczynski M. .X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates[J].Journal of Crystal Growth,2002(1/2):37-49. |
| [5] | 刘忠良,康朝阳,唐军,徐彭寿.4H-SiC衬底表面SiC薄膜的同质外延生长[J].人工晶体学报,2012(01):106-109,114. |
| [6] | Qin ZX.;Sugure Y.;Jia AW.;Kobayashi M.;Kato Y.;Yoshikawa A.;Takahashi K.;Nagano H. .High-resolution X-ray diffraction analysis of cubic GaN grown on (001)GaAs by RF-radical source molecular beam epitaxy[J].Journal of Crystal Growth,1998(0):425-429. |
| [7] | 陈诺夫,修慧欣,杨君玲,吴金良,钟兴儒,林兰英.用X射线双晶衍射方法测定GaMnAs组分[J].科学通报,2001(24):2035-2038. |
| [8] | Shuang Qu;Chengxin Wang;Shuqiang Li .Influence of the misorientation of 6H-SiC substrate on the quality of GaN epilayer grown by MOVPE[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2011(8):3656-3660. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%