GaN基和LiZnAs基稀磁半导体的研究进展

材料导报, 2013, 27(15): 113-118.

GaN基和LiZnAs基稀磁半导体的研究进展

王爱玲 ^1, , 毋志民 ^2, , 王聪 ^3, , 赵若禺 ^4,

1.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

2.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

3.重庆师范大学物理与电子工程学院,重庆401331

4.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

基金项目: 重庆市高校创新团队项目(201013) 重庆市教委科技项目(KJ110634) 国家自然科学基金(612011119) 教育部科学技术重点项目(211152)

关键词： GaN基稀磁半导体 , LiZnAs基新型稀磁半导体 , 居里温度 , 晶体结构

Research Progress of Diluted Magnetic Semiconductors Based on GaN and LiZnAs

WANG Ailing ^1, , WU Zhimin ^2, , WANG Cong ^3, , ZHAO Ruoyu ^4,

1.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

2.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

3.重庆师范大学物理与电子工程学院,重庆401331

4.重庆师范大学物理与电子工程学院,重庆401331;重庆市光电功能材料重点实验室,重庆401331

Keywords： diluted magnetic semiconductor based on GaN , diluted magnetic semiconductor based on LiZnAs , Curie temperature , crystal structure

综述了稀磁半导体及其研究进展,阐述了提高居里温度的方法.从晶体结构、材料的研究现状和待解决的问题几个方面详述了以GaN为代表的传统的Ⅲ-Ⅴ族基和LiZnAs为代表的新型Ⅰ-Ⅱ-Ⅴ族基两类稀磁半导体的基本特点,并展望了今后的研究重点及发展方向.

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