利用自主研发的圆柱谐振腔式MPCVD设备,在工作气压28 kPa,微波功率5 kW的条件下成功制备金刚石单晶,并采用光学显微镜、激光拉曼谱(Raman)技术对样品进行表征.结果表明,在高气压高功率条件下单晶的沉积速率高达26 μm/h,且表面形貌平整.
参考文献
| [1] | 王启亮,吕宪义,成绍恒,张晴,李红东,邹广田.高速生长CVD金刚石单晶及应用[J].超硬材料工程,2011(02):1-5. |
| [2] | 王裕昌.人造大单晶金刚石的合成技术进展及主要应用[J].超硬材料工程,2008(06):28-32. |
| [3] | M. Stammler;H. EisenbeiB;J. Ristein;J. Neubauer;M. Gobbels;L. Ley .Growth of high-quality homoepitaxial diamond films by HF-CVD[J].Diamond and Related Materials,2002(3-6):504-508. |
| [4] | 王东胜,王志勇,董耀华.人造大单晶金刚石合成技术及应用研究现状[J].广东建材,2010(04):36-40. |
| [5] | 满卫东,谢鹏,吴宇琼,孙蕾,汪建华.微波等离子体同质外延修复金刚石的研究[J].人工晶体学报,2008(05):1157-1161. |
| [6] | Man, WD;Weng, J;Wu, YQ;Chen, P;Yu, XC;Wang, JH .A Novel Method of Fabricating a Well-Faceted Large-Crystal Diamond Through MPCVD[J].Plasma Science & Technology,2009(6):688-692. |
| [7] | Li HD;Zou GT;Wang QL;Cheng SH;Li B;Lu JN;Lu XY;Jin ZS .High-rate growth and nitrogen distribution in homoepitaxial chemical vapour deposited single-crystal diamond[J].Chinese physics letters,2008(5):1803-1806. |
| [8] | S. S. Ho;C. S. Yan;Z. Liu .Prospects for large single crystal CVD diamond[J].Industrial diamond review,2006(1):28-32. |
| [9] | T. Teraji;M. Hamada;H. Wada .High-quality homoepitaxial diamond (100) films grown under high-rate growth condition[J].Diamond and Related Materials,2005(11/12):1747-1752. |
| [10] | Yan CS;Vohra YK;Mao HK;Hemley RJ .Very high growth rate chemical vapor deposition of single-crystal diamond.[J].Proceedings of the National Academy of Sciences of the United States of America,2002(20):12523-12525. |
| [11] | 黄建良,汪建华,满卫东.微波等离子体化学气相沉积金刚石膜装置的研究进展[J].真空与低温,2008(01):1-5. |
| [12] | 黄建良,汪建华.微波法大功率稳定快速沉积CVD金刚石膜[J].武汉工程大学学报,2007(04):63-66. |
| [13] | 吕反修,黑立富,刘杰,宋建华,李成明,唐伟忠,陈广超.CVD金刚石大单晶外延生长及高技术应用前景[J].热处理,2013(05):1-11,12. |
| [14] | K.W. Hemawan;T.A. Grotjohn;D.K. Reinhard .Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density[J].Diamond and Related Materials,2010(12):1446-1452. |
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