采用一步共蒸法制备铜铟镓硒(CIGS)薄膜,研究讨论不同衬底温度条件对制得薄膜结构和形貌的影响.薄膜的结构和形貌分别利用X射线衍射(XRD)与扫描电子显微镜(SEM)进行检测.结果表明,衬底温度对CIGS薄膜的生长有很大的影响,当温度为250℃时,开始有CIGS晶相生成;随着温度的升高晶体颗粒逐渐增大;当温度达到450℃时,生成了结晶度较好(112)择优取向的CuIn0.7Ga0.3Se2相,制得的CIGS薄膜初步达到制备CIGS电池的条件.
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