利用化学溶液沉积法在Pt/Ti/SiO2/Si(100)基底和700℃条件下分别制备了Nd和Sc/Al/( Sc,Al)共掺杂的钛酸铋薄膜Bi3.15 Nd0.85 Ti2.94 Sc0.06O12 (BNTSc)、Bi3.15 Nd0.85 Ti2.94 Al0.06O12(BNTAl)和Bi3.15Nd0.85 Ti2.94(Sc0.03,Al0.03)O12(BNT(Sc,Al)),并研究和对比了这一系列薄膜的微结构、介电、铁电和漏电流等特性.结果发现BNT( Sc,Al)薄膜具有较高的剩余极化强度和介电常数,其漏电流密度低于BNTAl薄膜.另外,还讨论了相关的物理机制.
参考文献
| [1] | Scott J F;Araujo C A .Ferroelectric memories[J].Science,1989,246(4936):1400. |
| [2] | Phil Kook Son;Jeung Hun Park;Sung Su Cha;Jae Chang Kim;Tae-Hoon Yoon;Soon Joon Rho;Baek Kyun Jeon;Jang Sub Kim;Soon Kwon Lim;Kyeong Hyeon Kim .Vertical alignment of liquid crystal on a-SiO_(x) thin film using the ion beam exposure[J].Applied physics letters,2006(26):263512-1-263512-3-0. |
| [3] | Thiele C et al.Piezoelectrically induced resistance modulations in La0.7 Sr0.3 MnOs/Pb(Zr,Ti) O3 field effect devices[J].Applied Physics Letters,2005,87(16):162512. |
| [4] | Park B K et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].Nature,1999,401:682. |
| [5] | Shimakawa Y;Kubo Y;Tauchi Y et al.Crystal and electronic structures of Bi4-r LarTi3O12 ferroelectric materials[J].Applied Physics Letters,2001,79(17):2791. |
| [6] | Scott J F .Device physics of ferroelectric thin-film memories[J].Japanese Journal of Applied Physics Part 2:Letters,1999,38(04):2272. |
| [7] | Nagata H et al.Ferroelectric properties of bismuth layerstructured compound Srx Bi4-x Ti3-x TarO12 (0≤x≤ 2)[J].Japanese Journal of Applied Physics Part 2:Letters,1999,38(09):5497. |
| [8] | Electromechanical properties of Nd-doped Bi_(4)Ti_(3)O_(12) films: A candidate for lead-free thin-film piezoelectrics[J].Applied physics letters,2003(11):1760-1762. |
| [9] | Uong Chon;Ki-Bum Kim;Hyun M. Jang;Gyu-Chul Yi .Fatigue-free samarium-modified bismuth titanate (Bi_(4-x)Sm_(x)Ti_(3)O_(12)) film capacitors having large spontaneous polarizations[J].Applied physics letters,2001(19):3137-3139. |
| [10] | Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate[J].Journal of Applied Physics,2003(8):4769-4775. |
| [11] | Zhong X L et al.Ferroelectric properties of Mn-doped Bi3.15 Nd0.85 Ti3O12 thin films prepared under different annealing conditions[J].Materials Letters,2008,62(17-18):2891. |
| [12] | Giridharan NV;Subramanian M;Jayavel R .Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications[J].Applied physics, A. Materials science & processing,2006(1):123-126. |
| [13] | Kaibin Ruan;Guangheng Wu;Tong Liang;Dinghua Bao .Structural and electrical characteristics of chemical solution derived (Bi_(3.2)La_(0.4)Nd_(0.4))Ti_3O_(12) thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(16):5248-5251. |
| [14] | S. T. Zhang;Y. F. Chen;J. Wang;G. X. Cheng;Z. G. Liu;N. B. Ming .Ferroelectric properties of La and Zr substituted Bi_(4)Ti_(3)O_(12) thin films[J].Applied physics letters,2004(18):3660-3662. |
| [15] | Zhong X L;Wang J B;Liao M et al.Ferroelectric and dielectric properties Nd/Zr cosubstituted Bi4Ti3O12 thin films[J].Applied Physics Letters,2007,90(10):102906. |
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