采用磁控溅射法制备了TiO2/Al2O3堆栈结构高k栅介质薄膜,研究了不同后处理条件对等效氧化物厚度,界面电荷和界面扩散的影响.实验结果表明:400℃退火后,TiO2已经结晶,退火可以降低漏电流密度和介电层中的电荷密度.同时,退火使Ti进一步向Al2O3层扩散,形成TiO2和A12为O3的混合层,Al2O3层过薄时不能有效阻挡TiO2的扩散.
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