以富含大孔或大介孔结构的硅胶为原料,在其上通过原位晶化合成具有小介孔-大介孔双孔分布的复合SiO2,并利用N2吸附-脱附、X射线衍射、扫描电镜、透射电子显微镜等手段对SiO2的物化性能和孔分布进行了表征.结果表明,所制备的样品具有双孔分布,孔径分别在3和45nm左右;小介孔的孔结构与MCM-41介孔类似,负载于硅胶表面及大孔孔壁上;大介孔的孔径较硅胶孔径有所减小,但未被完全填充堵塞.通过改变TEOS/大孔硅胶及CTAB/TEOS的配比可以实现对双介孔SiO2孔分布的调控.
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