氢化纳米硅(nc-Si:H)薄膜具有室温下的高电导率、电致发光及光致发光等独特的性能,可应用于超大规模集成电路中,因而引起人们广泛的研究兴趣.简单地综述了国内外有关nc Si:H薄膜的制备方法、导电机理、发光机理及其应用于量子功能器件等方面的研完工作.
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