以甲烷为前驱体,采用等离子体增强化学气相沉积( PECVD)技术沉积类富勒烯碳基( FL-C∶H)薄膜于单晶硅
Fullerene like hydrogenated carbon ( FL-C∶ H ) thin films were deposited on the surface of monocrystalline silicon
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