本文在分析cusp磁场抑制对流原理的基础上,采用有限元法对大尺寸单晶炉cusp磁场进行了建模.利用模型分析了磁场结构尺寸对磁场强度的影响,优化了磁场结构;分析了线圈规格对磁场功率的影响,优化了磁场功率;并通过实验验证了建模方法的有效性.实验结果表明:该模拟方法可用于大尺寸单晶炉cusp磁场的实际设计.
参考文献
| [1] | 田达晰,杨德仁,徐明生,阙端麟.直拉硅单晶中氧的轴向均匀性控制[J].材料科学与工程,2000(03):105-109. |
| [2] | Rudolph P;Frank-Rotsch C .A New Method to Grow III-V Crystals from Melt in Travelling Magnetic Fields[J].Materials Science in Semiconductor Processing,2003,16(05):347-351. |
| [3] | Series R W .Czochralski Growth of Silicon under an Axial Magnetic Field[J].Journal of Crystal Growth,1997,17(01):85-91. |
| [4] | Ozoe H;Iwamoto M .Combined Effects of Crucible Rotation and Horizontal Magnetic Field on Dopant Concentration in a Czochralski Melt[J].Journal of Crystal Growth,1994,14(02):236-248. |
| [5] | Hirata H;Hoshikawa K .Three-dimensional Numerical Analysis of Effects of Cusp Magnetic Field on the Flows,Oxygen Transport and Heat Transfer in a Czochralski Silicon Melt[J].Journal of Crystal Growth,1992,12(05):181-190. |
| [6] | 高勇,李波,安涛,李守智,刘飞航.单晶炉勾形磁场装置结构参数的分析与优化[J].人工晶体学报,2008(03):577-582. |
| [7] | Erich T;Janis V;Wilfried V A .Application of Dynamic and Combined Magnetic Fields in the 300 mm Silicon Single-crystal Growth[J].Materials Science in Semiconductor Processing,2003,16(05):366-371. |
| [8] | Lan CW .Recent progress of crystal growth modeling and growth control[J].Chemical Engineering Science,2004(7):1437-1457. |
| [9] | 孙明礼;胡仁喜;崔海蓉.ANSYS 10.0电磁学有限元分析实例指导教程[M].北京:机械工业出版社,2007:17-103. |
| [10] | 甘艳,阮江军,张宇,彭迎,赵炜.组合网格法及其在电磁问题中的应用[J].电工技术学报,2008(11):8-14. |
| [11] | 曹红奋;梅国梁.传热学:理论基础及工程应用[M].北京:人民交通出版社,2004:134-168. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%