采用射频磁控溅射法在LaNiO3（100）/SiO2/Si（100）衬底上制备了0.65Pb（Mg1/3Nb2/3）O3-0.35PbTiO3（PMN-PT）铁电薄膜,采用两步法快速退火法对制备的PMN-0.35PT薄膜进行了不同工艺的后处理。实验结果表明,在LaNiO3上溅射的PMN-PT薄膜呈现高度的（100）取向。对PMN-PT薄膜测试表明,在合适的两步法快速退火处理时,可以获得表面平整颗粒饱满,且铁电性能很好的薄膜,其剩余极化强度（2Pr）可以达到24μC/cm2,平均粗糙度为7.4nm,在室温1kHz的测试频率下,εr和tanδ分别为545和0.062。
The 0.65Pb（Mg1/3Nb2/3）O3-0.35PbTiO3（PMN-PT） thin films was prepared on LaNiO3（100）/SiO2/Si（100） substrate via a RF magnetron sputtering method.The PMN-PT thin films were post-annealed by two-step rapid thermal anneal in different conditions.It was indicated that PMN-PT thin films show highly（100）-orientated.This surface of the thin films by proper two-step rapid thermal anneal was smooth,dense and crack-free,also show excellent ferroelectric properties.The（2Pr） can be up to 24μC/cm2,and the RMS roughness only 7.4nm.Furthermore,dielectric constant（εr） and loss（tanδ） are 545 and 0.062,respectively.
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