硅是供电(光)器件制作中重要的换能功能材料,为了选择国内采用放射性同位素氚研制辐射伏特效应核电池的加栽方法,从多孔硅的制备方法出发,详细介绍了国外开展的氚在多孔单晶硅、无定型硅上的无载体加载工作,并结合其实验结果,理论分析了氚在硅表面的化学键合方式与释放行为.分析结果表明:为了得到较高的含氚量,在采用多孔单晶硅加载氚时,不仅要提高反应体系中氚的含量,还应提高硅的表面孔密度;在用无定型硅加载氚时,应控制好氚的沉积条件;新制作的氚化硅核电池在额外放电几天后才有稳定的电输出.
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