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Apeculiar crystal defect was observed by experiment of high resolution electron microscopy( HREM) .It wasidentifiedtoformed bytwothreading dislocationsand asegmentof(11 20) domain boundary. An atomicstructure model was proposed for the anomalous defect. Theresultofthe weak beam experimentofelectron microscopeaffirmedthesuggested model.Thestructuralpropertiesofseveral GaN(11 2 0) domain boundaries werestudied by Molec ular Dynamicscalculations. Thetheoreticalresultsshowedthatthelike atom bonding domain boundary, whichcomposesthe main partofthe peculiar defect, has much higher formationenergy than itcounterpartof unlike atom bonding domain boundary. Theoutcome providesanotherevidenceforthesuggested model.

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