在室温条件下,利用自行设计的平面"S"形磁过滤等离子体设备,在(111)面单晶硅上制备TiN薄膜,通过改变基底偏压和反应气体成分,即通过改变氮气和氩气的气体流量来改变沉积离子的能量和密度,从离子轰击的角度研究了沉积条件对TiN薄膜织构的影响.对薄膜的表面形貌进行观察,用(θ～2θ)和1.5°掠入射2种X射线衍射方法对薄膜晶体结构和晶面取向进行了分析,对薄膜进行了电子衍射研究.结果显示磁过滤等离子制备的TiN薄膜表面平整光滑,颗粒尺寸为20～70 nm,且基底偏压和氩气流量的增大促使薄膜发生(111)面的择优取向,且(111)晶面与膜表面平行,而在高氩气流量的情况下,(200)和(220)面在薄膜平面也发生了定向排列.
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