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采用TO220封装的电子元件,研究了在温度循环条件下,元件Cu引脚上纯Sn镀层的Sn须生长行为.研究发现,Sn须在温度循环条件下的生长呈现出较高速率、较高密度、较一致长度的特点.随着温度循环次数的增加,Sn须密度和长度不断增加;与此同时,镀层表面Sn须的附近区域出现凹坑.研究表明,Cu-Sn金属间化合物的生长速率很快,使得镀层内部压应力增大,Sn须生长驱动力增加;同时,不同材料热失配产生的低周疲劳热应力,为Sn须的生长提供了额外的驱动力.此外,交变的热应力更容易破坏表面氧化膜促进Sn须的生长.满足应力条件和取向条件的晶粒首先发生Sn须生长,高密度的Sn须生长诱发部分晶粒发生向内的变形,在镀层表面形成大量的凹坑.

参考文献

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