采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,并用XRD、SEM、四探针等对薄膜进行表征,研究了沉积时间对薄膜晶体结构、表面形貌以及电学性能的影响.研究发现,沉积时间能够调节Mo薄膜的择优取向.溅射时间较短(5～10min)时,沉积的Mo薄膜呈(110)择优取向.溅射时间超过15min后,薄膜呈现(211)取向,且(211)晶面择优程度随沉积时间的增加而提高.随着择优取向的改变,薄膜的表面形貌由三角形颗粒变为长条形颗粒,电阻率也发生相应变化,由3.92×10-5Ω·cm增加到4.27×10-5Ω·cm再降低,对应薄膜生长的晶带模型由晶带T型组织变为晶带2组织.
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