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为了适应市场对低压集成电路过流保护作用的PTC热敏陶瓷的低阻化要求,采用还原-再氧化的烧结工艺来制备多层片式PTC热敏陶瓷.本文主要研究了(Ba1.022-xSmx)TiO3基陶瓷在还原气氛中1200℃烧结30 min并在800℃再氧化热处理后其室温电阻率随施主掺杂浓度的变化关系,以及冷却速率对该样品PyTC效应的影响.从氧化物半导体理论出发,阐述了在还原再氧化过程中该陶瓷的缺陷模型和晶界特性,讨论了施主掺杂BaTiO3基PTC陶瓷缺陷行为与晶界势垒及其导电机理,解释了冷却速率和再氧化时间对样品的电性能以及PTC效应的影响.

参考文献

[1] Mancini MW;Paulin PI .Direct observation of potential barriers in semiconducting barium titanate by electric force microscopy[J].Journal of Applied Physics,2006(10):4501-1-4501-6-0.
[2] Sinclair DC.;West AR. .USE OF SUCCINIC ACID TO TEST THE STABILITY OF PTCR BARIUM TITANATE CERAMICS UNDER REDUCING CONDITIONS[J].Journal of the American Ceramic Society,1995(1):241-244.
[3] Z.-C. Li;H. Zhang;X. Zou .Synthesis of Sm-doped BaTiO_3 ceramics and characterization of a secondary phase[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2005(1):34-39.
[4] Dongxiang Zhou;Xuxin Cheng;Qiuyun Fu .Influence of cooling mode on the electrical properties and microstructure of Ba_(1.022-x)Sm_xTiO_3 ceramics sintered in a reducing atmosphere[J].CERAMICS INTERNATIONAL,2012(8):6389-6397.
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