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采用溶胶.凝胶法在Si和普通玻璃基底上制备V2O5纳米薄膜.在空气中对样品进行不同温度的退火处理.利用X射线衍射、扫描电子显微镜和分光光度计对制备的V2O5薄膜的结构、形貌和光学特性进行研究.XRD和SEM研究结果表明:可以通过升高退火温度来提高薄膜的结晶程度、颗粒尺寸及其均匀程度,并增强V2O5的择优取向性.透射谱和吸收谱的研究结果表明:随着退火温度的升高,V2O5薄膜的吸收边缘发生红移,光学带隙逐渐变窄.

参考文献

[1] 潘林霄;曹兴忠;李养贤 et al.[J].物理学报,2004,53:1956.
[2] Ramana CV.;Naidu BS.;Julien C.;Balkanski M.;Hussain OM. .Physical investigations on electron-beam evaporated vanadium pentoxide films[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,1998(1):32-39.
[3] 袁宁一,李金华,林成鲁.溶胶-凝胶VO2薄膜转换特性研究[J].物理学报,2002(04):852-856.
[4] Huguenin F;Torresi R M;Buttry D A .[J].Journal of the Electrochemical Society,2002,149:546.
[5] Ramana CV.;Naidu BS.;Reddy PJ.;Hussain OM. .SPECTROSCOPIC CHARACTERIZATION OF ELECTRON-BEAM EVAPORATED V2O5 THIN FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):219-226.
[6] Watanabe H.;Matsumoto O.;Itoh K. .Properties of V2O5 thin films deposited by means of plasma MOCVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(2):281-285.
[7] Ramana C V;Smith R J;Hussain O M .[J].Materials Science and Engineering B:Solid State Materials for Advanced Technology,2004,111:218.
[8] Passerini S;Ressler J J;Le D B et al.[J].Electrochimica Acta,1999,44:2209.
[9] Wu Guangming;Wang Jue;Shen Jun et al.[J].Journal of Non-Crystalline Solids,2000,275:169.
[10] 王利霞,李建平,何秀丽,高晓光.二氧化钒薄膜的低温制备及其性能研究[J].物理学报,2006(06):2846-2851.
[11] Hidetoshi M;Hiroyasu S;Masayuki K et al.[J].Solid State Ionics,1999,122:223.
[12] 方国家,刘祖黎,王又青,周远明,姚凯伦.脉冲准分子激光扫描沉积(PLD)高c轴取向V2O5/Si薄膜及结构分析[J].硅酸盐学报,2001(01):13-17.
[13] Ozer N. .ELECTROCHEMICAL PROPERTIES OF SOL-GEL DEPOSITED VANADIUM PENTOXIDE FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):80-87.
[14] Ramana C V;Hussain O M .[J].Applied Surface Science,2003,207:135.
[15] 张辉,刘应书,刘文海,王宝义,魏龙.基片温度与氧分压对磁控溅射制备氧化钒薄膜的影响[J].物理学报,2007(12):7255-7261.
[16] Katsunori Takahashi;Ying Wang;Guozhong Cao .[J].Applied Physics Letters,2005,86:53 102.
[17] 李名复.半导体物理学[M].北京:科学出版社,1991:164.
[18] 何宇亮;陈光华;张仿清.非晶态半导体物理学[M].北京:高等教育出版社,1989:287.
[19] Parker J C;Lam D J;Xu Y N et al.[J].Physical Review B,1990,42(08):5289.
[20] Aita C R;Liu Y L;Kao M L et al.[J].Journal of Applied Physics,1986,62:749.
[21] 吴广明;吴永刚;倪星元 .[J].光学学报,1999,19:643.
[22] Luksich J;Aita C R;Vac J .[J].Science Technology A,1991,9:54.
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