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  4. 离子注入诱导硅材料发光的研究进展

材料导报, 2011, 25(1): 11-15.

离子注入诱导硅材料发光的研究进展

韦冬 1, , 王茺 2, , 杨宇 3,

1.云南大学光电信息材料研究所,昆明,650091

2.云南大学光电信息材料研究所,昆明,650091

3.云南大学光电信息材料研究所,昆明,650091

基金项目:   国家自然科学基金(10964016;10990101)   云南大学理工基金(2009E27Q)   教育部科学技术研究重点项目(210207)  

关键词： 硅 , 离子注入 , 发光 , 退火

Advance in the Growth of Ge/Si Quantum Dots

阐述了采用离子注入技术在硅晶体(Si)中形成缺陷的发光机制,综述了离子注入诱导硅材料发光的研究进展,包括稀土离子掺入硅晶体形成稀土杂质中心发光,Ⅳ族元素C、Ge离子注入Si/SiO<,2>形成等离子缺陷中心发光,以及B、S、P等常规离子注入硅晶体的缺陷发光,其中重点介绍了Si离子自注入诱导硅材料发光的研究现状,最后展望了硅基材料发光的未来发展.

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