为确定两种典型的反应气源对制备纳米金刚石膜的影响,分别以CH_4/Ar/H_2及CH_4/N_2混合气体作为反应源,用微波等离子体化学气相沉积(MWPCVD)法制备纳米金刚石薄膜.XRD和Haman分析表明两种气源条件下得到的膜材均为金刚石多晶膜,但用CH_4/N_2气为反应源沉积的膜材中非金刚石相成分明显更多;AFM和SEM对照分析证实所有膜层的平均晶粒尺寸及表面粗糙度均在几十纳米量级,但CH_4/N_2气源沉积的膜中容易形成异常长大的晶粒,不利于表面质量的提高.研究结果表明,以CH_4/Ar/H_2混合气体作为反应气源可制备物相组成纯度更高、表面形态更为优越的纳米金刚石膜.
To clarify the influence of gas reaction source on the composition and structure of nano diamond films, two typical sorts of mixing gases, namely CH_4 + Ar + H_2 and CH_4 + N_2, were respectively used to pre-pare diamond films with microwave plasma chemical vapor deposition technology. Characterization by XRD and Raman spectroscopy shows that the as-prepared materials are all polycrystalline diamond films, while those grown with CH_4 + N_2 contain more non-diamond components. It is proved by AFM and SEM eontrastive analy-ses that all obtained films have mean grain sizes and surface roughness within several tens of nanometers, but abnormally grown-up grains have emerged out in the films deposited with CH_4 + N_2, which is bad for the quali-ty improvement of film surface. The study demonstrates that using CH_4 + Ar + H_2 as reactive gas source can prepare nano diamond films with higher phase purity and better surface morphology.
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