采用直流四端接线法测量Fe_(78)Si_9B_(13)非晶合金在等温退火和升温过程中的电阻变化.结果表明,当温度高于693K时非晶结构易被热效应所影响.与DSC法相比较,直流电阻四端接线法的优点是能够反映出晶化的形核阶段.但是R-T曲线上所反映的晶化第二阶段的特征不明显,晶化第二阶段产物Fe_2B的电阻率比第一阶段产物Fe_3B的高可能是造成这一现象的原因.
The direct current four-terminal (DCFT) method was applied for the investigation on isothermal annealing and crystallization of amorphous Fe_(78)Si_9B(13) ribbons. The results show that thermal effect can influence the amorphous structure easily at the temperature above 693K. The DCFT method has the advantage to reveal the nucleation stage during crystallization over the DSC method. However, the feature about the second stage of the crystallization in R-T curve is more inconspicuous than that in DSC curve. We then suggest that the resistivity of the crystallization product Fe_2B of the second stage is higher than that (Fe_3B) of the first stage.
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