采用光刻和电镀技术在5mm×5mm×0.2mm的硅片上设计并制备了2000个大小为50μm×50μm的CoNiMnP垂直各向异性永磁薄膜阵列,并对该薄膜陈列的组成、磁性能等进行了分析与测试.结果表明:薄膜阵列的组成为:Co90.32wt%、Ni7.83wt%、Mn0.74wt%、P1.11wt%,阵列垂直方向磁性能为:Hc=59.7kA/m,Br=0.53T,(BH)max=11.3kJ/m3;阵列水平方向磁性能为:Hc=27.8kA/m,Br=53715T,(BH)max=1.585kJ/m3.
Using photolithographing and electroplating techniques, CoNiMnP permanent film arrays were
designed and fabricated. The microstructure, material composition and magnetic performances of the deposited film arrays were tested and analyzed.
The eletroplated permanent film arrays contain 2000 magnets of 50μm×50μm in a cubic shape on the silicon substrate of 5mm×5mm×0.2mm. The results show that high magnetic performances CoNiMnP
permanent film arrays with vertical anisotropy can be fabricated with current density less than 10mA/cm2 at room temperature. The deposited
film array compositions are as follows: Co90.32wt%, Ni 8.73wt%,Mn 0.74wt%, P1.11wt%. The vertical direction magnetic parameters are Hc=59.7kA/m,
Br=0.53T, (BH)max=11.3kJ/m3, while Hc=27.8kA/m, Br=0.42T, (BH)max=3.2kJ/m3 in the lateral direction.
参考文献
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