材料期刊网

以电沉积制备的Cu-In预制膜为衬底材料，硫粉为原料，尝试了Cu-In预制膜以一定速度移动的特殊硫化方法。采用SEM 和EDS观察和分析了它们的表面形貌和成分, 采用XRD 表征了薄膜的组织结构, 并分析了硫化中的反应动力学过程。结果表明：Cu-In预制膜由CuIn和CuIn2混合相组成，由其形成的CIS薄膜中除了CuInS2相以外，还出现CuxS二元相。KCN刻蚀处理去除表层的CuxS相后，底层的CuInS2薄膜具有黄铜矿相结构，与基底附着性较好。当速度为1.0cm/s时，CuInS2薄膜高质量结晶，薄膜均匀、致密，晶粒尺寸保持在1μm左右，组分接近化学计量比，沿(112)面择优取向生长，适合于制备CIS太阳能电池吸收层。

Electrodepositing Cu-In precursors were used as the backing materials, and sulfurpowder was employed as the raw materials. The innovative sulfur method of Cu-In precursor at certain speed movement was attempted. SEM and EDS were used to observe the surface morphologies and to determine the atomic concentrations .Their micro-structures were characterized by XRD. The kinetics of the reactions in the film were also analyzed.The results show Cu-In precursor is composed of CuIn and CuIn2 phases, the CuxS phase occures in addition to the CuInS2 phase in CIS films formed using CuIn and CuIn2 phases. The CuInS2 films etched KCN have chalcopytite structure, is good adhesive to substrate.When Cu-In precursor speed is 1.0cm/s, the crystalline quality of CuInS2 film is significantly improved, the film is even, compact, the grain size maintains at 1μm, compenent is close to stoichiometry, along (112) orientation growth, it is suitable for absorber of CIS solar cell.