根据在X射线二维衍射几何关系下建立的应力应变方程,提出了一种基于X射线多晶面探衍射仪系统分析射频磁控溅射制备的Pb(Zr,Ti)O3薄膜微区残余应力的测量方法,即通过基于X射线衍射圆锥形变的分析来表征薄膜的残余应力,试验结果表明薄膜所受为残余拉应力,同时利用X射线面探扫描方法评价了薄膜的残余应力分布.
参考文献
[1] | 张定铨;何家文.材料中残余应力的X射线衍射分析和作用[M].西安:西安交通大学出版社,1999 |
[2] | Hwang K J.Strain Measurements Inaluminum Interconnects by X-ray Microdiffraction[M].Columbia University:USA,2000 |
[3] | Whatmore R W;Zhang Q;Huang Z et al.[J].Materials Science in Semiconductor Processing,2005,5:65-76. |
[4] | Scott J F.Ferroelectric Memories[M].北京:清华大学出版社,2004 |
[5] | Yao K;Yu S H;Tay F E H .[J].Applied Physics Letters,2003,82:4540-4542. |
[6] | Shaw T M;Suo Z;Huang M;Liniger E et al.[J].Applied Physics Letters,1999,75:2129-2130. |
[7] | Garino T J;Harrington M .[J].Materials Research Society Symposium Proceedings,1992,243:341-345. |
[8] | Ramesh R.;Auciello O.;Aggarwal S. .Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories [Review][J].Materials Science & Engineering, R. Reports: A Review Journal,2001(6):191-236. |
[9] | He B B;Smith K L.[A].Sweden,1997:634-639. |
[10] | Tamura N;Padmore HA;Patel JR .High spatial resolution stress measurements using synchrotron based scanning X-ray microdiffraction with white or monochromatic beam[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2005(1/2):92-98. |
[11] | 马礼敦.近代X射线多晶体衍射[M].北京:化学工业出版社,2004 |
[12] | Gelfi M;Bontemqi E;Roberti R;Depero L E .[J].Acta Materialia,2004,52:583-589. |
[13] | Gelfi M;Bontempi E;Roberti R;Armelao L et al.[J].Thin Solid Films,2004,450:143-147. |
[14] | 陈冷,张清辉,毛卫民.残余应力及其分布的X射线二维衍射分析与计算[J].材料热处理学报,2006(01):120-123. |
[15] | 杨帆,孙跃,李伟力,费维栋.磁控溅射工艺参数对Pb(Zr,Ti)O3薄膜织构的影响[J].功能材料,2006(01):60-62. |
[16] | Bruker AXS.GADDS User's Manual[M].Medison:Bruker AXS Inc,USA,1999 |
[17] | Houtte P V;Buyser L D .[J].Scripta Materialia,1993,41(02):323-336. |
[18] | Zheng X J;Li J Y;Zhou Y C .[J].Acta Materialia,2003,51:3985-3991. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%