利用磁控双靶共溅射法制备了不同含量的铜镍合金薄膜,利用EDAX对合金薄膜衬底的铜镍配比进行了定量分析。以苯为碳源,选择相同的合金衬底分别在800、600和400℃的温度下使用化学气相沉积法生长石墨烯,对样品进行了拉曼光谱和SEM表征,研究了温度对石墨烯生长的影响。选择不同配比的铜镍合金衬底,在400℃下生长石墨烯,研究了衬底中铜、镍元素不同配比对石墨烯生长的影响。
The Cu-Ni alloy thin films with different ratio of Cu and Ni were prepared by double targets magnetron sputtering method.The samples were characterized by energy dispersive analysis of X-rays(EDAX).The ratio of Cu and Ni was accurately determined.Three graphene samples were fabricated with benzene as carbon source on the same kind of Cu-Ni alloy substrates at variable temperature of 800,600 and 400℃ by chemical vapor deposition method to study the impact of temperature on the growth of graphene.Three graphene samples were produced on three different Cu-Ni alloy substrates at 400℃ to study the impact of different ratio of the substrates on the growth of graphene.
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