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Diamond nucleation on (111)-oriented monocrystalline silicon wafer was investigated by hot filament chemical vapor deposition (HFCVD). The variation of nucleation density with time was determined. For a lower gas flow rate, the nucleation density-time curve comprises two parts, which represent the nucleation at surface defects and smoothly intact surface sites. For a higher gas flow rate, the distinction between the two parts in the curve tends to vanish. Diamond nucleation was enhanced by increasing the gas flow rate. (C) 2000 Elsevier Science Ltd.