采用介质阻挡化学气相沉积法(DBD-CVD)在Si及石英衬底上、室温下成功的沉积出光滑、致密、均匀、膜基结合较好的类金刚石(DLC)薄膜,并考察了电源电压对类金刚石薄膜结构及性能的影响.拉曼光谱(Raman)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、紫外-可见光谱(UV-Vis)、高阻仪等测试及分析结果显示DBD-CVD法适于制备高质量硬质DLC薄膜.对DBD放电做了理论分析,结果与工艺研究的结论相符合.
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