High quality (AlGa)InP epilayers lattice matched on GaAs substrates were grown by atmospheric pressure metallorganic vapor phase epitaxy (AP-MOVPE).The relationship between surface morphologies and lattice mismatches was studied.The influence of Al incorporation to the photoluminescence and electronic properties of AlGaInP was measured.The applicability of growth at atmospheric pressure and the passivation of Zn in AlGaInP were discussed.
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