采用离子束溅射方法制备了正巨磁电阻多层膜,在制备过程中采用外加磁场和退火处理.在室温条件下多层膜的巨磁电阻效应达到200%~300%,并用磁矩取向的双电流导电模型对正磁电阻的机理进行了解释.
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