硅纳米孔柱阵列的场致电子发射

功能材料, 2009, 40(12): 2071-2076.

硅纳米孔柱阵列的场致电子发射

富笑男 ^1, , 符建华 ^2, , 罗艳伟 ^3, , 李坤 ^4, , 程莉娜 ^5, , 李新建 ^6,

1.河南工业大学,理学院,河南,郑州,450001

2.河南工业大学,理学院,河南,郑州,450001

3.河南工业大学,理学院,河南,郑州,450001

4.河南工业大学,理学院,河南,郑州,450001

5.河南工业大学,理学院,河南,郑州,450001

6.郑州大学,物理系,材料物理教育部重点实验室,河南,郑州,450052

基金项目: 河南工业大学科研项目(07XJC010) 河南工业大学博士科研基金(2007BS009) 国家自然科学基金(10574112) 河南省教育厅自然科学基金(2007140003)

关键词：硅纳米孔柱阵列 , 场致电子发射 , 纳米硅 , 多孔硅

Field emission from silicon nanoporous pillar array

FU Xiao-nan ^1, , FU Jian-hua ^2, , LUO Yan-wei ^3, , LI Kun ^4, , CHENG Li-na ^5, , LI Xin-jian ^6,

1.河南工业大学,理学院,河南,郑州,450001

2.河南工业大学,理学院,河南,郑州,450001

3.河南工业大学,理学院,河南,郑州,450001

4.河南工业大学,理学院,河南,郑州,450001

5.河南工业大学,理学院,河南,郑州,450001

6.郑州大学,物理系,材料物理教育部重点实验室,河南,郑州,450052

Keywords： silicon nanoporous pillar array(Si-NPA) , field emission , nano-silicon , porous silicon

测试了用水热技术制备的硅纳米孔柱阵列(silicon nanoporous pillar array(简称Si-NPA))的场致发射性能.测试结果显示,Si-NPA的开启电场为约1.48V/μm;在5V/μm的外加电场下,其发射电流密度为28.6μA/cm~2;在外加电场4.4V/μm时,其电流浮动率为13%.Si-NPA发射性能增强的原因是由于其独特的表面形貌和结构所致.

Field emission from silicon nanoporous pillar array (Si-NPA) is studied. The results show that the Si-NPA turn-on field is about 1.48V/μm, the emission current density of 28.6μA/cm~2 is obtained to be 5V/μm, and the current fluctuation ratio is 13% at 4.4V/μm. The enhanced field emission from Si-NPA is attributed to unique surface morphology and structure of Si-NPA.

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