本文采用化学气相输运法在常压开放系统中以(0001)蓝宝石为基片制备出定向生长的ZnO晶体.以ZnO粉体为原料,NH4Cl为输运气体,O2和H2O为反应气体,加入适量的HCl作刻蚀性气体,通过调节NH4Cl输运量,获得两种不同生长方向的ZnO晶体,分别为(1010)方向和(0002)方向.(0002)方向上生长的晶体呈现六角片状,a、b轴生长速度明显高于c轴方向,晶体在基片上呈外延生长,大面积显露c面,且和蓝宝石c面平行.文中对O2、H2O、NH4Cl、HCl在晶体的生长中的作用和生长机制进行了讨论.
参考文献
[1] | Yuan XL;Zhang BP;Niitsuma J;Sekiguchi T .Cathodoluminescence characterization of ZnO nanotubes grown by MOCVD on sapphire substrate[J].Materials science in semiconductor processing,2006(1/3):146-150. |
[2] | 宋词,杭寅,张昌龙,徐军,顾书林,夏长泰,周卫宁,仲维卓.水热法ZnO晶体特征研究[J].人工晶体学报,2005(06):1083-1087. |
[3] | Nielsen K F .Growth of ZnO Single Crystals by the Vapor Phase Reaction Method[J].Journal of Crystal Growth,1968,3:141-145. |
[4] | Takahashi T;Ebina A;Kamiyama A .Vapor Reaction Growth of ZnO Single Crystals[J].Japanese Journal of Applied Physics,1966,5:560-561. |
[5] | Shiloh M;Gutman J .Growth of ZnO Single Crystals by Chemical Vapor Transport[J].Journal of Crystal Growth,1971,11:105-109. |
[6] | Matsumoto K;Shimaoka G .Crystal Growth of ZnO by Chemical Transport[J].Journal of Crystal Growth,1988,86:410-414. |
[7] | Piekarczyk W;Gazda S;Niemyski T .The Growth of Zinc Oxide Crystals by Chemical Transport Method[J].Journal of Crystal Growth,1972,12:272-276. |
[8] | Matsumoto K;Konemura K;Shimaoka G .Crystal Growth of ZnO by Vapor Transport in a Closed Tube Using Zn and ZnCl2 as Transport Agents[J].Journal of Crystal Growth,1985,71:99-103. |
[9] | Makoto Mikami;Toshiaki Eto;JiFeng Wang;Yoshihiko Masa;Minoru Isshiki .Growth of zinc oxide by chemical vapor transport[J].Journal of Crystal Growth,2005(3/4):389-392. |
[10] | Mikami M;Sato T;Wang JF;Masa Y;Isshiki M .Improved reproducibility in zinc oxide single crystal growth using chemical vapor transport[J].Journal of Crystal Growth,2006(2):213-217. |
[11] | Palosz W .Vapor transport of ZnO in closed ampoules[J].Journal of Crystal Growth,2006(1):42-49. |
[12] | 赵有文,董志远,魏学成,段满龙,李晋闽.化学气相传输法生长ZnO单晶[J].半导体学报,2006(02):336-339. |
[13] | 赵有文,董志远,魏学成,段满龙,李晋闽.化学气相传输法生长ZnO单晶及性质研究[J].人工晶体学报,2006(02):404-408. |
[14] | 魏学成,赵有文,董志远,李晋闽.ZnO单晶的缺陷及其对材料性质的影响[J].半导体学报,2006(10):1759-1762. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%