采用射频磁控溅射制备Mn掺杂CuO薄膜样品.X射线衍射结果说明薄膜样品为单相结构且沿(111)取向生长.通过样品的XRD精修得到样品的结构和晶格参数,掺杂后薄膜晶体结构有微小畸变.薄膜的高分辨透射电镜研究证明了对结构和晶粒大小等的精修结果,且同时说明Mn以替代Cu的形式掺入了CuO晶格中.通过对样品M-T曲线的分析,得到样品的居里温度为96.5K,近邻Mn离子之间的耦合为铁磁性,并由居里外斯拟合得到Mn离子的有效磁矩为3.1μB.这说明磁性不是来自于团聚的Mn原子或铜锰的其它氧化物,而很可能来自于替位的锰离子所形成的Mn-O-Cu-O-Mn之间的铁磁性耦合.
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