利用射频(RF)溅射在Pt/Ti/SiO2/Si衬底上沉积(Ba0.65Sr0.35)TiO3(BST)薄膜,制成Pt/BST/Pt平板电容,研究在正反偏压下BST薄膜漏电流的J-V和J-T特性.反偏压时,上电极Pt和BST薄膜形成肖特基接触,漏电流遵循肖特基发射机制.正偏压时,BST薄膜和下电极Pt界面存在大量的界面态,使得漏电流遵循空间电荷限制电流(SCLC)机制,漏电流密度随偏压的增加而急剧增加,随测试温度的增加而减小产生了PTCR效应.利用深陷阱空间电荷限制电流模型,解释了BST薄膜的PTCR效应受εr(T)和V(Tc/T)+1的共同作用,其中εr(T)的作用占优.
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