材料期刊网

ZnO/Si heterojunctions were prepared by the sol-gel method and hexagonal polycrystalline wurtzite structures with pores were observed by a field emission scanning electron microscope. The steady photovoltage properties of ZnO/Si heterojunctions were obtained under the illumination of a 532 nm continuum solid state laser with a 50 Hz chopper. In addition ns photoresponse signals were found when the samples were excited by a ps pulsed laser at room temperature. A possible mechanism was proposed to describe the photovoltaic process in the ZnO/Si heterojunction.