采用离子辅助轰击共溅射设备,在Si基体的(111)晶面上制得了所需的铜膜.采用纳米压入实验,获得不同退火温度下Cu膜的弹性模量和硬度.再在纳米压入实验的基础上,结合有限元模型计算不同退火温度下磁控溅射得到的Cu膜屈服强度.发现Cu膜的屈服强度远高于整体Cu材料的屈服强度,并且退火温度对薄膜的屈服强度影响很大.通过XRD测量发现其主要原因是退火改变了晶粒尺寸和多晶Cu膜的晶粒取向分布,而导致Cu膜屈服强度的降低.
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