MOVPE Growth of InxGa1-xN (x ～ 0.4) and Fabrication of Homo-junction Solar Cells

材料科学技术（英文）, 2013, 29(2): 128-136.

^1, , ^2, , ^3, , ^4, , ^5,

1.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

2.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

3.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

4.Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

5.Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

MOVPE Growth of InxGa1-xN (x ～ 0.4) and Fabrication of Homo-junction Solar Cells

Md. Rafiqul Islam ^1, , Md. Rejvi Kaysir ^2, , Md. Jahirul Islam ^3, , A. Hashimoto ^4, , A. Yamamoto ^5,

1.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

2.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

3.Department of Electrical and Electronic Engineering, KUET, Khulna 9203, Bangladesh

4.Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

5.Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan

Keywords： InGaN

参考文献

[1]	J. Wu;W. Walukiewicz;K. M. Yu;W. Shan;J. W. Ager;E. E. Haller;Hai Lu;William J. Schaff;W. K. Metzger;Sarah Kurtz .Superior radiation resistance of In_(1-x)Ga_(x)N alloys: Full-solar-spectrum photovoltaic material system[J].Journal of Applied Physics,2003(10):6477-6482.
[2]	K. Sasamoto;T. Hotta;K. Sugita;A.G. Bhuiyan;A. Hashimoto;A. Yamamoto;K. Kinoshita;Y. Kohji .MOVPE growth of high quality p-type InGaN with intermediate In compositions[J].Journal of Crystal Growth,2011(1):492-495.
[3]	E. Trybus;O. Jani;S. Burnham;I. Ferguson;C. Honsberg;M. Steiner;W. A. Doolittle .Characteristics of InGaN designed for photovoltaic applications[J].Physica Status Solidi. C, Conferences and critical reviews,2008(6):1843-1845.
[4]	R. Togashi;T. Kamoshita;Y. Nishizawa;H. Murakami;Y. Kumagai;A. Koukitu .Experimental and ab-initio studies of temperature dependent InN decomposition in various ambient[J].Physica Status Solidi. C, Conferences and critical reviews,2008(6):1518-1521.
[5]	C. Wetzel;T. Takeuchi;S. Yamaguchi .Optical band gap in Ga↓(1-x)In↓(x)N (0< x<0.2) on GaN by photoreflection spectroscopy[J].Applied physics letters,1998(13/18):1994-1996.
[6]	X.Q. Shen;T. Ide;M. Shimizu .Growth and characterizations of InGaN on N- and Ga- polarity GaN grown by plasma-assisted molecular-beam epitaxy[J].Journal of Crystal Growth,2002(Pt.2):1148-1152.
[7]	H. P. D. Schenk;P. de Mierry;M. Laugt;F. Omnes;M. Leroux;B. Beaumont;P. Gibart .Indium iocorporation above 800degC during metalorganic vapor phase epitaxy of InGaN[J].Applied physics letters,1999(17):2587-2589.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

MOVPE Growth of InxGa1-xN (x ～ 0.4) and Fabrication of Homo-junction Solar Cells

参考文献